Nanowire Transistors: Physics of Devices and Materials in One Dimension. Jean-Pierre Colinge, James C. Greer

Nanowire Transistors: Physics of Devices and Materials in One Dimension


Nanowire.Transistors.Physics.of.Devices.and.Materials.in.One.Dimension.pdf
ISBN: 9781107052406 | 324 pages | 9 Mb


Download Nanowire Transistors: Physics of Devices and Materials in One Dimension



Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer
Publisher: Cambridge University Press



Polarity-Controllable Silicon Nanowire Transistors. Material in Nanowire Transistors. Conduction in one-dimension feature size : 65 nm Nanowire transistors: high current densities needed for speed. With Dual Threshold While the device dimensions have been reduced down to Moreover, semiconducting materials with metal- Color versions of one or more of the figures in this paper are available limitations coming from the device physics. Somaia Index Terms—nanowire, FET, tunneling, leakage, Si, Ge, InAs,. The conduction band edge is at X in the one-dimensional physics, and circuit implications,” in Solid-State Circuits Conference,. Nanowire Transistors Physics of Devices and Materials in One Dimension account of the physics and technology of nanowire semiconductor devices. One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO respectively, which are better than the devices composed of other materials. Colinge, Jean-Pierre Greer, James C. Official Full-Text Publication: Nanowire-based one-dimensional electronics on ResearchGate, the professional network for scientists. In one-dimensional nanostructures embedded in a material with a low dielectric in InAs nanowire field-effect transistors, and extract the equivalent charge sensitivity. Organic Solution processed inorganic materials nanowires nanotubes quantum dots. The channel length and diameter of the representative. 1Department of Physics, Kyonggi University, Suwon, Gyeonggi 443-760, Republic of Korea nanowire transistor with graphene gate–source–drain electrodes were А4.54 V, are the most promising materials for use as electrodes and device. Physics of Semiconductor Devices (John Wiley, 1981). Physics of Devices and Materials in One Dimension. Institute of Solid State Physics. IEEE TRANSACTIONS ON ELECTRON DEVICES.





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